Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure
Identifieur interne : 000794 ( Russie/Analysis ); précédent : 000793; suivant : 000795Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure
Auteurs : RBID : Pascal:02-0149774Descripteurs français
- Pascal (Inist)
- Oscillation quantique, Magnétorésistance, Gaz électron 2 dimensions, Surface vicinale, Microscopie électronique transmission, Effet Hall, Anisotropie, Mobilité porteur charge, Champ intense, Effet champ magnétique, Amortissement, Effet Shubnikov de Haas, Structure périodique, Indium arséniure, Semiconducteur, Superréseau, Composé binaire, Gallium arséniure, Aluminium arséniure, Composé ternaire, As In, InAs, As Ga, GaAs, 7343Q, Al As Ga, AlGaAs.
- Wicri :
- concept : Amortissement.
English descriptors
- KwdEn :
- Aluminium arsenides, Anisotropy, Binary compounds, Carrier mobility, Damping, Gallium arsenides, Hall effect, High field, Indium arsenides, Magnetic field effects, Magnetoresistance, Periodic structures, Quantum oscillation, Semiconductor materials, Shubnikov-de Haas effect, Superlattices, Ternary compounds, Transmission electron microscopy, Two-dimensional electron gas, Vicinal surface.
Abstract
Short-period lateral superlattices have been fabricated on a vicinal high-mobility GaAs/AlGaAs heterostructure. The superlattices were fabricated by growing one or four (1/2InAs + 1/2GaAs) monolayers in the close vicinity of the two-dimensional electron gas (2DEG). The TEM study approved formation of the lateral superlattice with a period of about 10 nm. Standard Hall-effect measurements revealed anisotropy of the electron mobility in consistence with the direction of the superlattice terraces. A number of unusual features were observed in quantum magnetotransport in the high magnetic field region as compared to the uniform 2DEG, i.e., damping of the amplitude and splitting of the Shubnikov-de Haas peaks. At low negative gate voltage when the new structure became more pronounced and clear we were able to distinguish a periodic structure, which could be interpreted as commensurability oscillations in lateral superlattice with a period of about 8 nm.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure</title><author><name sortKey="Studenikin, S A" uniqKey="Studenikin S">S. A. Studenikin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentjeva Avenue</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk, 630090</wicri:noRegion></affiliation></author><author><name sortKey="Rechkunov, S N" uniqKey="Rechkunov S">S. N. Rechkunov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentjeva Avenue</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk, 630090</wicri:noRegion></affiliation></author><author><name sortKey="Toropov, A I" uniqKey="Toropov A">A. I. Toropov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentjeva Avenue</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk, 630090</wicri:noRegion></affiliation></author><author><name sortKey="Koenraad, P" uniqKey="Koenraad P">P. Koenraad</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>COBRA Interuniversity Research Institute, Department of Physics, Eindhoven University of Technology, PO Box 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>4 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0149774</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0149774 INIST</idno><idno type="RBID">Pascal:02-0149774</idno><idno type="wicri:Area/Main/Corpus">00FA36</idno><idno type="wicri:Area/Main/Repository">00EB64</idno><idno type="wicri:Area/Russie/Extraction">000794</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Anisotropy</term><term>Binary compounds</term><term>Carrier mobility</term><term>Damping</term><term>Gallium arsenides</term><term>Hall effect</term><term>High field</term><term>Indium arsenides</term><term>Magnetic field effects</term><term>Magnetoresistance</term><term>Periodic structures</term><term>Quantum oscillation</term><term>Semiconductor materials</term><term>Shubnikov-de Haas effect</term><term>Superlattices</term><term>Ternary compounds</term><term>Transmission electron microscopy</term><term>Two-dimensional electron gas</term><term>Vicinal surface</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Oscillation quantique</term><term>Magnétorésistance</term><term>Gaz électron 2 dimensions</term><term>Surface vicinale</term><term>Microscopie électronique transmission</term><term>Effet Hall</term><term>Anisotropie</term><term>Mobilité porteur charge</term><term>Champ intense</term><term>Effet champ magnétique</term><term>Amortissement</term><term>Effet Shubnikov de Haas</term><term>Structure périodique</term><term>Indium arséniure</term><term>Semiconducteur</term><term>Superréseau</term><term>Composé binaire</term><term>Gallium arséniure</term><term>Aluminium arséniure</term><term>Composé ternaire</term><term>As In</term><term>InAs</term><term>As Ga</term><term>GaAs</term><term>7343Q</term><term>Al As Ga</term><term>AlGaAs</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Amortissement</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Short-period lateral superlattices have been fabricated on a vicinal high-mobility GaAs/AlGaAs heterostructure. The superlattices were fabricated by growing one or four (1/2InAs + 1/2GaAs) monolayers in the close vicinity of the two-dimensional electron gas (2DEG). The TEM study approved formation of the lateral superlattice with a period of about 10 nm. Standard Hall-effect measurements revealed anisotropy of the electron mobility in consistence with the direction of the superlattice terraces. A number of unusual features were observed in quantum magnetotransport in the high magnetic field region as compared to the uniform 2DEG, i.e., damping of the amplitude and splitting of the Shubnikov-de Haas peaks. At low negative gate voltage when the new structure became more pronounced and clear we were able to distinguish a periodic structure, which could be interpreted as commensurability oscillations in lateral superlattice with a period of about 8 nm.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>17</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure</s1></fA08><fA11 i1="01" i2="1"><s1>STUDENIKIN (S. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>RECHKUNOV (S. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>TOROPOV (A. I.)</s1></fA11><fA11 i1="04" i2="1"><s1>KOENRAAD (P.)</s1></fA11><fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentjeva Avenue</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>COBRA Interuniversity Research Institute, Department of Physics, Eindhoven University of Technology, PO Box 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>4 aut.</sZ></fA14><fA20><s1>1-7</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000103208370010</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0149774</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Short-period lateral superlattices have been fabricated on a vicinal high-mobility GaAs/AlGaAs heterostructure. The superlattices were fabricated by growing one or four (1/2InAs + 1/2GaAs) monolayers in the close vicinity of the two-dimensional electron gas (2DEG). The TEM study approved formation of the lateral superlattice with a period of about 10 nm. Standard Hall-effect measurements revealed anisotropy of the electron mobility in consistence with the direction of the superlattice terraces. A number of unusual features were observed in quantum magnetotransport in the high magnetic field region as compared to the uniform 2DEG, i.e., damping of the amplitude and splitting of the Shubnikov-de Haas peaks. At low negative gate voltage when the new structure became more pronounced and clear we were able to distinguish a periodic structure, which could be interpreted as commensurability oscillations in lateral superlattice with a period of about 8 nm.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40H</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Oscillation quantique</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Quantum oscillation</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Oscilación cuántica</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Magnétorésistance</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Magnetoresistance</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Surface vicinale</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Vicinal surface</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet Hall</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Hall effect</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Anisotropie</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Anisotropy</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Mobilité porteur charge</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Carrier mobility</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Champ intense</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>High field</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet champ magnétique</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Magnetic field effects</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Amortissement</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Damping</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Effet Shubnikov de Haas</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Shubnikov-de Haas effect</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Structure périodique</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Periodic structures</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Superréseau</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Superlattices</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composé binaire</s0><s5>18</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Binary compounds</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>21</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>21</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>7343Q</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Al As Ga</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>AlGaAs</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fN21><s1>084</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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